产品服务 —— 薄膜沉积

Thin Film Deposition 薄膜沉积


·      Aluminum Nitride Sputtering System  
AlN
溅射机

A designated high speed aluminum nitride deposition system with load lock.

Capable of making highly C-axis oriented (FWHM < 2 degree) and low stress films.

Substrate size: 4" wafers only


·      Sputtering System
溅射机

Five targets, RF or DC, 5" or 75 mm.

Up to five substrates, 1" 2" and 3" wafers.

Programmable substrate positioning.

Variable target-substrate distance.

8" cryo pump.

500 W DC power supplies, 600 W RF power supplies, substrate bias.

Secondary sputtering gas available.


·      DC and RF Sputter System
直流与射频溅射系统

Loadlock reduces contamination and allows fast cycle times.

Turbo-pumped vacuum chamber has a base vacuum of 2.6 x 10-5 Pa (2 x 10-7 Torr).

Rotating stage for high uniformity deposition of thin films.

Stage temperature range: 25 °C to 350 °C.

600 W DC and RF power supplies.

Two RF and two DC guns.

One DC gun is magnetically enhanced for ferromagnetic materials.

Touch screen user interface; layers can be programmed sequentially.

Co-sputtering capability from one RF and one DC gun.

Argon bombardment can be used to remove native oxide from wafers.

Substrate size: 150 mm diameter wafers down to small pieces.


·      Cluster Sputtering Deposition System
集群溅射沉积系统

Transfer robot and cassette elevators reduce contamination and allow fast cycle times.

24/7 unattended operation.

Cryo-pumped process modules have a base vacuum of 2.6 x 10-6 Pa (2 x 10-8 Torr).

Rotating stage for high uniformity deposition of thin films.

Uniformity: 2 % (1 sigma).

Stage temperature range: 20 °C.

Quartz crystal thickness monitor.

Residual gas analyzer.

Ion guns for wafer pre-clean.

Oxygen and nitrogen available for reactive sputtering.

Substrate size: 200 mm diameter wafers down to small pieces.

12 fixed sputtering targets:

o    Chrome.

o    Gold.

o    Nickel.

o    Titanium.

o    Platinum.

o    Tantalum.

o    Aluminum.

o    Cobalt.

o    Silicon dioxide.

o    Indium tin oxide.

o    Titanium oxide.

o    Tantalum oxide.


·      Electron Beam Evaporator
电子束镀膜机

Cryogenically pumped chamber has a base vacuum of 1.0 x 10-5 Pa (8 x 10-8 Torr).

Rotating planetary substrate holder provides uniform film deposition.

Rotating planetary substrate holder capacity: 4 whole wafers or piece carriers.

Six source electron gun evaporation.

Fully automatic or manual operation.

Multilayer deposition.

Over 25 deposition sources provided including most common metals and dielectrics.

Substrate size: 150 mm diameter wafers down to small pieces.

Ion gun with selectable gases:

o    Argon for oxide removal prior to deposition.

o    Oxygen for ion assisted deposition of dielectrics.


·      PECVD

8" chuck.

Substrate heater (375°C max.).

Deposits SiO2 and SixNy.


·      LPCVD

Low pressure chemical vapor deposition (LPCVD) with three vacuum tubes.

Automatic recipe controller.

Maximum Temperature: Silicon nitride, 850 °C; all others, 650 °C.

Maximum Deposition Thickness: 5 µm.

Substrate size: 150 mm diameter wafers down to small pieces.

Standard processes:

o    Stoichiometric and low stress silicon nitride.

o    Doped and undoped polysilicon.

o    Low temperature oxide depositions.


·      HDPCVD

High density plasma chemical vapor deposition (HDPCVD) system for high quality, pinhole-free films that are comparable to high temperature furnace deposited films. Maximum radio frequency (RF) bias power: 600 W.

Maximum inductively coupled plasma power (ICP): 2000 W.

Maximum substrate temperature: 180 °C.

Film thicknesses ranging from a few nanometers to several micrometers.

Substrate size: 200 mm diameter wafers down to small pieces.

Processes supported:

o    Silicon dioxide.

o    Silicon nitride.

o    Amorphous silicon.


·      ALD

Precisely controlled ultrathin and pinhole free film coating.

Film thicknesses ranging from one atomic layer to several nanometers.

Maximum temperature: 800 °C.

Maximum radio frequency (RF) power: 600 W.

Substrate size: 200 mm diameter wafers down to small pieces.

Standard deposition processes:

o    Silicon dioxide.

o    Hafnium oxide.

o    Aluminum oxide.

o    Aluminum nitride.

o    Platinum.