产品服务 —— 光刻

Lithography 光刻


·       Spinner/Hotplate
甩胶机/热板

Manual coating of resist.

Maximum speed: 6000 RPM.

Maximum hot plate temperature: 300 °C with 0.1 °C resolution.

Hot plate temperature uniformity: ± 0.3 % across working surface.

Three bake modes: proximity, vacuum, and contact.

Substrate size: 200 mm diameter wafers down to small pieces.


·      Laser Pattern Generator
激光图案生成器(制版)

For substrate patterning of features as small as 700 nm.

For patterning chrome on glass photomasks and for maskless direct substrate writing.

Standard processes include photomask patterning for use in both contact and stepper lithography.

Minimum feature size: 700 nm.

Write speed: 110 mm2 / min.

Address grid: 20 nm.

Allowed data formats: DXF, GDS-II, CIF, and Gerber.

Alignment system for exposing patterns on existing structures.

Maximum wafer diameter: 200 mm (8 in).

Maximum substrate thickness: 7 mm.

Small pieces supported: Yes.

Photomask blank sizes provided: 125 mm (5 inch) and 150 mm (6 inch).


·      Contact aligner
接触式曝光机

Exposure methods: flood, proximity, soft, hard, low vacuum and vacuum contacts.

Illumination area: 150 mm diameter.

Resolution: 1 µm.

Overlay accuracy: = 500 nm.

Front and back side pattern alignment.


·      High throughput i-line Stepper       
高吞吐率i-line步进机

5X reduction of photomask patterns.

Resolution. Resolution: 280 nm

Overlay accuracy: 40 nm.

3D backside alignment.

Substrate size: 200 mm diameter wafers down to small pieces

Throughput = 84 wafers per hour.


·      E-beam lithography   
电子束光刻

Accelerating voltage: 100 keV.

Spot size: 2 nm.

Scan rate: 50 MHz.

DAC resolution: 19 bit.

Write field: 0.5 mm (4th lens).

Stitching accuracy: < 20 nm.

Overlay accuracy: < 20 nm.

Substrate size: 200 mm diameter wafers down to small pieces.