产品服务 —— 干法刻蚀

Dry Etch 干法刻蚀


·       ICP Etcher (Cl-based)  
氯基ICP刻蚀机

Inductively coupled plasma (ICP) power source: up to 2500 W at 2.4 MHz.

Radio frequency (RF) power source: up to 600 W at 13.56 MHz.

Electrode temperature range: -150 °C to 300 °C.

Unique process gases: chlorine, boron trichloride, hydrogen bromide, silicon tetrachloride, methane, and hydrogen.

Controlled profile GaAs etching.

High-temperature InP etching.

Substrate size: 200 mm diameter wafers down to small pieces.


·      ICP Etcher (F-based)  
氟基ICP刻蚀机

Inductively coupled plasma (ICP) power source: up to 2500 W at 2.4 MHz.

Radio frequency (RF) power source: up to 600 W at 13.56 MHz.

Electrode temperature range: -150 °C to 300 °C.

Unique process gases: hexafluoroethane (C2F6), octafluorocyclobutane (C4F8), trifluormethane (CHF3), and hydrogen.

Anisotropic etching of silicon and silicon oxide.

Low temperature silicon etching.

Substrate size: 200 mm diameter wafers down to small pieces.


·      Deep Silicon Etcher  
深硅刻蚀机

Silicon etch rate: up to 30 µm / min.

Inductively coupled plasma (ICP) power source: up to 3000 W at 2.4 MHz.

Radio Frequency (RF) power source: up to 500 W at 13.56 MHz.

Substrate size: 200 mm diameter wafers down to small pieces.

Etch selectivity:

o    Silicon to silicon oxide = 100 to 1.

o    Silicon to photoresist: = 50 to 1.


·      Xenon Difuoride Silicon Etcher  
二氟化氙硅刻蚀机

Etch selectivity:

o    Silicon to silicon dioxide: = 100 to 1.

o    Silicon to silicon nitride: = 100 to 1.

o    Silicon to photoresist: = 60 to 1.

Unique gases: xenon difluoride.

Substrate size: 150 mm diameter wafers down to small pieces.